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| Manufacturer Part Number: | APTM50DHM65T3G |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET 2N-CH 500V 51A SP3 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | APTM50DHM65T3G Datasheet |
| Internal Part Number | 898-APTM50DHM65T3G | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 8™ | |
| Packaging | Bulk | |
| Part Status | Active | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 51A | |
| Rds On (Max) @ Id, Vgs | 78 mOhm @ 42A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 340nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 10800pF @ 25V | |
| Power - Max | 390W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Supplier Device Package | SP3 | |
| Standard Package | 1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | APTM50DHM65T3G | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
APTM50DHM65T3G is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of APTM50DHM65T3G is new and unused, you can buy APTM50DHM65T3G Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for APTM50DHM65T3G.
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