| Manufacturer Part Number: | BUZ32 |
|---|---|
| Manufacturer: | Infineon Technologies |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 200V 9.5A TO220AB |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | Obsolete / Discontinued |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | BUZ32 Datasheet |
| Internal Part Number | 898-BUZ32 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| PCN Obsolescence/ EOL | Multiple Devices 22/Feb/2008 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) | |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V | |
| Power - Max | 75W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | PG-TO220-3 | |
| Standard Package | 500 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | BUZ32 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
BUZ32 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of BUZ32 is new and unused, you can buy BUZ32 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for BUZ32.
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