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DN3135K1-G

DN3135K1-G
Manufacturer Part Number:DN3135K1-G
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:12010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 350V 72MA SOT23-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: DN3135K1-G Datasheet
DN3135K1-G´s Parameters
Internal Part Number898-DN3135K1-G
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationDie Attach Material Update 22/Jun/2015
PCN Assembly/OriginQualification Supertex Devices 22/Jul/2014
Qualification Report Revision 29/Jan/2015
Fab Site Addition 14/Aug/2014
Fab Site Revision 07/Apr/2015
PCN PackagingLabel and Packing Changes 23/Sep/2015
Online Catalog N-Channel Depletion Mode FETs
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerMicrochip Technology
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureDepletion Mode
Drain to Source Voltage (Vdss)350V
Current - Continuous Drain (Id) @ 25°C72mA (Tj)
Rds On (Max) @ Id, Vgs35 Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds120pF @ 25V
Power - Max360mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Standard Package 3,000
Weight0.001 KG
ApplicationEmail for details
Replacement PartDN3135K1-G
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

DN3135K1-G is in stock for immediate shipping now. We are the distributor of Microchip Technology all series components. The condition of DN3135K1-G is new and unused, you can buy DN3135K1-G Microchip Technology with us at a very low price and quick delivery.

Please kindly send us an email if you have any demands for DN3135K1-G.

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