Manufacturer Part Number: | PDTD113ZS,126 |
---|---|
Manufacturer: | NXP Semiconductors |
Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | TRANS PREBIAS NPN 500MW TO92-3 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | PDTD113ZS,126 Datasheet |
Internal Part Number | 898-PDTD113ZS,126 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Category | Discrete Semiconductor Products | |
Family | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | NXP Semiconductors | |
Series | - | |
Packaging | Tape & Box (TB) | |
Part Status | Obsolete | |
Transistor Type | NPN - Pre-Biased | |
Current - Collector (Ic) (Max) | 500mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) (Ohms) | 1k | |
Resistor - Emitter Base (R2) (Ohms) | 10k | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
Current - Collector Cutoff (Max) | 500nA | |
Frequency - Transition | - | |
Power - Max | 500mW | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
Supplier Device Package | TO-92-3 | |
Standard Package | 2,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | PDTD113ZS,126 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
PDTD113ZS,126 is in stock for immediate shipping now. We are the distributor of NXP Semiconductors all series components. The condition of PDTD113ZS,126 is new and unused, you can buy PDTD113ZS,126 NXP Semiconductors with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for PDTD113ZS,126.
C0603C102K2RACTU | 1000pF 200V Ceramic Capacitor X7R 0603 (1608 Metric) 0.063" L x 0.031" W (1.60mm x 0.80mm) | C0603C102K2RACTU.pdf | |
562R10TST47RR | 470pF 1000V (1kV) Ceramic Capacitor X5F Radial, Disc 0.252" Dia (6.40mm) | 562R10TST47RR.pdf | |
UP050SL100J-A-B | 10pF 50V Ceramic Capacitor SL Axial 0.087" Dia x 0.126" L (2.20mm x 3.20mm) | UP050SL100J-A-B.pdf | |
B32686S2473K563 | 0.047µF Film Capacitor 500V 2000V (2kV) Polypropylene (PP), Metallized Rectangular Box 1.654" L x 0.630" W (42.00mm x 16.00mm) | B32686S2473K563.pdf | |
CDV30FJ202JO3 | MICA | CDV30FJ202JO3.pdf | |
IUGBX666-1REG4-36655-40 | CIR BRKR MAG-HYDR ROCKER | IUGBX666-1REG4-36655-40.pdf | |
HN1D02FU(T5L,F,T) | Diode Array 2 Pair Common Cathode Standard 80V 100mA Surface Mount SOT-563, SOT-666 | HN1D02FU(T5L,F,T).pdf | |
PHB193NQ06T,118 | MOSFET N-CH 55V 75A D2PAK | PHB193NQ06T,118.pdf | |
SD3110-820-R | 82µH Shielded Wirewound Inductor 167mA 3.57 Ohm Nonstandard | SD3110-820-R.pdf | |
Z8401510FEC00TR | Z80 Microprocessor IC Z80 1 Core, 8-Bit 10MHz 100-QFP | Z8401510FEC00TR.pdf | |
97-3106A22-16SX-417-940 | AB 9C 6#16, 3#12 SKT PLUG | 97-3106A22-16SX-417-940.pdf | |
D38999/20MH35JA-LC | CONN RCPT 100POS FLANGE W/SKT | D38999/20MH35JA-LC.pdf | |
4-103322-0-10 | 20 Positions Header, Unshrouded, Breakaway Connector 0.100" (2.54mm) Through Hole Tin-Lead | 4-103322-0-10.pdf | |
RT0603WRB0744K2L | RES SMD 44.2K OHM 1/10W 0603 | RT0603WRB0744K2L.pdf |