Manufacturer Part Number: | SI3460DV-T1-GE3 |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 20V 5.1A 6TSOP |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SI3460DV-T1-GE3 Datasheet |
Internal Part Number | 898-SI3460DV-T1-GE3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Video File | MOSFET Technologies for Power Conversion | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) | |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V | |
Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) | |
Gate Charge (Qg) @ Vgs | 20nC @ 4.5V | |
Input Capacitance (Ciss) @ Vds | - | |
Power - Max | 1.1W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Supplier Device Package | 6-TSOP | |
Standard Package | 3,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SI3460DV-T1-GE3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SI3460DV-T1-GE3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SI3460DV-T1-GE3 is new and unused, you can buy SI3460DV-T1-GE3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SI3460DV-T1-GE3.
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