Manufacturer Part Number: | SIHF12N65E-GE3 |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 650V 12A TO-220 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SIHF12N65E-GE3 Datasheet |
Internal Part Number | 898-SIHF12N65E-GE3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Video File | MOSFET Technologies for Power Conversion | |
PCN Assembly/Origin | SIL-079-2014-Rev-0 26/Sep/2014 | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | - | |
Packaging | Bulk | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 70nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1224pF @ 100V | |
Power - Max | 33W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 Full Pack | |
Supplier Device Package | TO-220 Full Pack | |
Standard Package | 1,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SIHF12N65E-GE3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SIHF12N65E-GE3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SIHF12N65E-GE3 is new and unused, you can buy SIHF12N65E-GE3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SIHF12N65E-GE3.
C340C474K1R5TA | 0.47µF 100V Ceramic Capacitor X7R Radial 0.400" L x 0.150" W (10.16mm x 3.81mm) | C340C474K1R5TA.pdf | |
C0805C150K5GALTU | 15pF 50V Ceramic Capacitor C0G, NP0 0805 (2012 Metric) 0.079" L x 0.049" W (2.00mm x 1.25mm) | C0805C150K5GALTU.pdf | |
LDEQG2680KA5N00 | 0.068µF Film Capacitor 250V 1000V (1kV) Polyester, Polyethylene Naphthalate (PEN), Metallized - Stacked 5040 (127102 Metric) 0.512" L x 0.409" W (13.00mm x 10.40mm) | LDEQG2680KA5N00.pdf | |
M39003/01-6211/HSD | 3.9µF Hermetically Sealed Tantalum Capacitors 50V Axial 0.185" Dia x 0.474" L (4.70mm x 12.04mm) | M39003/01-6211/HSD.pdf | |
ECC17DCAD | CONN EDGECARD 34POS R/A .100 SLD | ECC17DCAD.pdf | |
CRBV55CL-0393-0428 | Center Frequency 410.5MHz Voltage Controlled Oscillator 0.5 ~ 4.5 V 3 ±3 dBm -12 dBc | CRBV55CL-0393-0428.pdf | |
QK008DH4TP | TRIAC ALTERNISTOR 1KV 8A TO252 | QK008DH4TP.pdf | |
HUF76645S3S | MOSFET N-CH 100V 75A D2PAK | HUF76645S3S.pdf | |
AISC-1210-3R9J-T | 3.9µH Unshielded Wirewound Inductor 290mA 3.6 Ohm Max Nonstandard | AISC-1210-3R9J-T.pdf | |
LQH88PN680M38L | 68µH Shielded Wirewound Inductor 1.1A 190 mOhm 3131 (8080 Metric) | LQH88PN680M38L.pdf | |
8N4QV01KG-0063CDI | VCXO IC 24MHz, 39.4MHz, 48MHz, 64MHz 10-CLCC | 8N4QV01KG-0063CDI.pdf | |
VE-B3X-EX-F1 | CONVERTER MOD DC/DC 5.2V 75W | VE-B3X-EX-F1.pdf | |
SSW-129-02-S-S-RA | 29 Position Receptacle Connector 0.100" (2.54mm) Through Hole, Right Angle Gold | SSW-129-02-S-S-RA.pdf | |
VP10855400J0G | 10 Position Wire to Board Terminal Block Horizontal with Board 0.500" (12.70mm) Through Hole | VP10855400J0G.pdf | |
RNF18FTD11K5 | RES 11.5K OHM 1/8W 1% AXIAL | RNF18FTD11K5.pdf |